An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily forming an electronic switch. It was developed to...

six decades. Introduced in 1983, the insulated-gate bipolar transistor (IGBT) has in the past two decades come to dominate VFDs as an inverter switching...

total weight: 132 t. WAG-9i: Version with IGBT Technology. WAG-9Hi: Version with additional ballast and IGBT Technology. WAG-9HC: Heavy version with Conventional...

HVDC world until the late 20th century, when the IGBT began to match its power ratings. With the IGBT, the first voltage-sourced converters and STATCOMs...

limited to low voltage applications. The Insulated-gate bipolar transistor (IGBT) was developed in the 1980s, and became widely available in the 1990s. This...

Besides modules that contain a single power electronic switch (as MOSFET, IGBT, BJT, Thyristor, GTO or JFET) or diode, classical power modules contain multiple...

of August 2007[update], EMD and DLW have begun building GT46ACe's using IGBT technology to replace the older gate turn-off thyristor technology and along...

spring contacts for electrical connections 2004 SKYPER IGBT driver family 2003 SEMiX first flat IGBT half-bridge family from 250 to 900 A with solder-free...

power semiconductor devices — diodes and thyristors, power assemblies and IGBT modules. The company is located in Orel and is one of the largest companies...

IGBT inverters. Delivered January to March 2005. 8-car sets x 2: 1041, 1049 4-car sets x 2: 1417, 1421 Initially built with Siemens-manufactured IGBT-VVVF...