by the International Bureau of Weights and Measures; SI symbol: nm) or nanometer (American spelling) is a unit of length in the International System of...

The 800 nanometer process (800 nm process) is a level of semiconductor process technology that was reached in the 1989–1990 timeframe, by most leading...

The term die shrink (sometimes optical shrink or process shrink) refers to the scaling of metal–oxide–semiconductor (MOS) devices. The act of shrinking...

The "14 nanometer process" refers to a marketing term for the MOSFET technology node that is the successor to the "22 nm" (or "20 nm") node. The "14 nm"...

field-effect transistor) die shrink after the "3 nm" process node. The term "2 nanometer" or alternatively "20 angstrom" (a term used by Intel) has no relation...

is expected to have a contacted gate pitch of 51 nanometers and a tightest metal pitch of 30 nanometers". However, in real world commercial practice, "5...

The 600 nanometer process (600 nm process) is a level of semiconductor process technology that was reached in the 1994–1995 timeframe, by most leading...

The 350 nanometer process (350 nm process) is a level of semiconductor process technology that was reached in the 1995–1996 timeframe by leading semiconductor...

Three gold atoms lined up are about one nanometer (nm) long. If a toy marble were scaled down to one nanometer wide, Earth would scale to about 1 meter...

The 250 nm process (250 nanometer process or 0.25 μm process) is a level of semiconductor process technology that was reached by most manufacturers in...