Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD)...

Stranski–Krastanov growth for ATG. Pulsed laser deposition Metalorganic vapour phase epitaxy Colin P. Flynn Arthur Gossard High-electron-mobility transistor...

high-brightness LEDs used a thin film of GaN deposited via metalorganic vapour-phase epitaxy (MOVPE) on sapphire. Other substrates used are zinc oxide...

polymers, such as polyethylene and polystyrene. The process of metalorganic vapour-phase epitaxy (MOCVD) entails pyrolysis of volatile organometallic compounds...

cases, argon, from hydrogen. Hydrogen purifiers are used in metalorganic vapour phase epitaxy reactors for LED production. Fuel cell electric vehicles commonly...

metallurgy Electrostatic spray assisted vapour deposition Element Six Ion plating Metalorganic vapour phase epitaxy Virtual metrology Lisa McElwee-White...

epitaxial cadmium telluride and mercury cadmium telluride using metalorganic vapour phase epitaxy. Dimethyl telluride as a product of microbial metabolism was...

extremely small LED packages. GaN is often deposited using metalorganic vapour-phase epitaxy (MOCVD), and it also uses lift-off. Even though white light...

atomic layer deposition. TMA is the preferred precursor for metalorganic vapour phase epitaxy (MOVPE) of aluminium-containing compound semiconductors, such...

at 550 °C. Thin films of ε-Ga2O3 are deposited by means of metalorganic vapour-phase epitaxy using trimethylgallium and water on sapphire substrates at...